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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3657 DESCRIPTION *High Collector-Emitter Breakdown Voltage: V(BR)CEO= 800V(Min) *Fast Switching Speed APPLICATIONS *Switching regulator and high voltage switching applications *High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Collector Current-Continuous w w scs .i w 900 V 800 V 7 V 4 A 8 A 2 A 5 A .cn mi e ICM Collector Current-Peak IB B Base Current-Continuous IBM Base Current-Peak Collector Power Dissipation @ TC=25 Junction Temperature PC 80 W TJ 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS IC= 10mA; IB= 0 MIN 2SC3657 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage 800 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 900 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.0 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 2A; IB= 0.4A B 1.5 V A Collector Cutoff Current VCB= 800V; IE= 0 100 IEBO Emitter Cutoff Current VEB= 7V; IC= 0 hFE DC Current Gain Switching times tr tstg tf Rise Time Storage Time Fall Time w w M 20-40 scs .i w IC= 1A; VCE= 5V .cn mi e 10 1 mA 1.0 s s s IC= 1A; IB1= -IB2= -0.4A; RL= 400; VCC 400V 2.5 1.0 hFE-1 Classifications K 10-20 L 15-30 isc Websitewww.iscsemi.cn 2 |
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